This data shows the variation of conduction resistance of devices under electrical stress levels of 15V, 20V, 25V, and Id=0.5A at a temperature of 110 degrees Celsius. The selection method for testing frequency is as follows: first, apply the specified electrical stress to the sample to be tested, then set the temperature change rate of 0.8 ℃/min in the temperature control box, turn on the heating system and data collection system of the temperature box, and collect Rds values every 30 seconds from room temperature to the set value. After the ambient temperature reaches the specified temperature, collect Rds values every 10 minutes. The test system mainly consists of Agilent DC power supply, distribution box, constant temperature and humidity box, data acquisition card, oscilloscope, and upper computer control software. Agilent DC power supply and distribution box are responsible for applying electrical stress; The constant temperature and humidity box is responsible for applying heating stress; The parameter testing module is used to test the sensitive parameters of MOSFETs. The data acquisition card and oscilloscope are responsible for collecting test data, and the upper computer software is responsible for controlling the entire system to achieve the required functions. Its purpose is to explore the change of temperature and thermal stress on Power MOSFET devices, which will bring about the change of conduction resistance. Therefore, the comprehensive stress acceleration test based on thermal stress on Power MOSFET devices can study the change rule of the conduction resistance of devices with the influence of temperature. At the same time, the obtained test data can be used to conduct parameter degradation modeling and life prediction technology research.
