This data is the power cycle aging test results of Power MOSFET at the maximum temperature of 170 ℃ set for power cycle test. The grid voltage Vgs=10V,=8A is set for the experiment, and the data acquisition system samples once every 2 seconds. This experiment used a power cycle testing device, which is mainly composed of a power supply, power switch, temperature sensor, cooling device, host control system, and data collection system. The power supply part is composed of four constant current sources, providing a constant current as the working current for device power cycle; The cooling system adopts the air cooling cooling mode, which is composed of Computer fan. When the device reaches the maximum set shell temperature, the device temperature is reduced through the Computer fan; The data acquisition system uses HIOKI temperature data acquisition instrument to collect data corresponding to the time gate voltage Vgs, conduction voltage, and shell temperature; The host control system provides pulsed Vgs voltage and controls the operation of MOSFET devices within a specified temperature range. In order to measure the conduction voltage of the device in a conduction state, this article selects the average temperature value during the experimental process to measure the conduction voltage of the device. The purpose of the experiment is to obtain aging experimental data of MOSFET devices through power cycle accelerated life testing. In response to the problem of predicting the remaining life of MOSFET devices, the variation of conduction voltage is used as a parameter for predicting their remaining life, and a residual life prediction model of MOSFET is constructed based on model algorithm methods.
